Search results for "Memory device"
showing 3 items of 3 documents
Location of holes in silicon-rich oxide as memory states
2002
The induced changes of the flatband voltage by the location of holes in a silicon-rich oxide (SRO) film sandwiched between two thin SiO 2 layers [used as gate dielectric in a metal-oxide-semiconductor (MOS) capacitor] can be used as the two states of a memory cell. The principle of operation is based on holes permanently trapped in the SRO layer and reversibly moved up and down, close to the metal and the semiconductor, in order to obtain the two logic states of the memory. The concept has been verified by suitable experiments on MOS structures. The device exhibits an excellent endurance behavior and, due to the low mobility of the holes at low field in the SRO layer, a much longer refresh …
Novel Iron(II) Microporous Spin-Crossover Coordination Polymers with Enhanced Pore Size
2012
In this Communication, we report the synthesis and characterization of novel Hofmann-like spin-crossover porous coordination polymers of composition {Fe(L)[M(CN)4]}·G [L = 1,4-bis(4-pyridylethynyl)- benzene and MII = Ni, Pd, and Pt]. The spin-crossover properties of the framework are closely related to the number and nature of the guest molecules included in the pores.
Anomalous diffusion and nonlinear relaxation phenomena in stochastic models of interdisciplinary physics
2020
The study of nonlinear dynamical systems in the presence of both Gaussian and non-Gaussian noise sources is the topic of this research work. In particular, after shortly present new theoretical results for statistical characteristics in the framework of Markovian theory, we analyse four different physical systems in the presence of Levy noise source. (a) The residence time problem of a particle subject to a non-Gaussian noise source in arbitrary potential profile was analyzed and the exact analytical results for the statistical characteristics of the residence time for anomalous diffusion in the form of Levy flights in fully unstable potential profile was obtained. Noise enhanced stability …